inchange semiconductor isc product specification isc silicon npn power transistor BU204 description high voltage-v cex = 1300v(min.) collector current- i c = 2.5a applications designed for use in large screen color deflection circuits . absolute maximum ratings(t a =25 ) symbol parameter value unit v cex collector-emitter voltage 1300 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 5 v i c collector current-continuous 2.5 a i cm collector current-peak 3.0 a i b b base current-continuous 1.0 a p c collector power dissipation @t c =25 36 w t j junction temperature 115 t stg storage temperature -65~115 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU204 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma, i b = 0 600 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 1a b 5.0 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 1a b 1.5 v i ces collector cutoff current v ce = 1300v; v be = 0 1.0 ma i ebo emitter cutoff current v eb = 5.0v ; i c = 0 10 ma h fe dc current gain i c = 2a ; v ce = 5v 2 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 50 pf f t current-gain?bandwidth product i c = 0.1a; v ce = 5v; f test = 1mhz 4 mhz t f fall time i c = 2a; i b = 1a; l b b = 25 h 0.65 s isc website www.iscsemi.cn 2
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